报告题目：The Theory of Self-Limited Growth of Graphene
报告人： Prof. Feng Ding (Ulsan National Institute of Science and Technology)
报告时间：2018年12月25日（星期二） 上午10:00-11:00
报告地点：明故宫校区9号楼506室
主办单位：机械结构力学及控制国家重点实验室、国际合作处、科协、航空宇航学院
 
报告内容简介：
The concept of self-limited growth was broadly adopted to explain the chemical vapor deposition (CVD) growth of single layer graphene on Cu surface, while there are still many mysteries regarding this concept are not well understood, such as the saturated coverage of graphene is less than 100% in some cases. Based on our previous theoretical exploration on graphene CVD growth, we propose a new theoretical model to understand the above phenomenon.
By considering the balancing of the active carbon precursors, such as CH3 and CH2, on the catalyst surface and in the carrier gas, we have found out how the graphene coverage affects the concentration of precursors on the metal surface and therefore the graphene CVD growth. A theoretical model was proposed to describe the evolution of graphene during graphene CVD growth on a substrate surface. The numerical fitting shows a perfect match between our model and experimental data and the phase field theory (PFT) simulation developed based on the new model represent the final structure of CVD graphene domains on a metal substrate (Figure). This new theoretical model of graphene self-limited growth, except for a better understanding of the graphene growth mechanism, could also provide new insights into the fabrication of wafer scale graphene films.
 
报告人简介：